Abstract
Multilayer Langmuir-Blodgett (LB) films of the diacetylene 10, 12-pentacosadyinoic acid (12-8 DA) have been successfully used as negative electron beam resists. Electron beam sensitivity and pattern quality have been optimized using Raman microscopy. Micrometre-sized aluminum features have been patterned using both wet etch and lift-off techniques. Submicrometre pattern features have been written onto the LB layers.
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