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Abstract
We report n- and p-channel polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated with a rapid joule heating method. Crystallization of 50-nm-thick silicon films and activation of phosphorus and boron atoms were successfully achieved by rapid heat diffusion via 300-nm-thick SiO/sub 2/ intermediate layers from joule heating induced by electrical current flowing in chromium strips. The effective carrier mobility and the threshold voltage were 570 cm/sup 2//Vs and 1.8 V for n-channel TFTs, and 270 cm/sup 2//Vs and -2.8 V for p-channel TFTs, respectively.
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