Abstract
Thin films of high-quality polycrystalline silicon (poly Si) on different substrates are of interest for manufacturing thin film transistors, solar cells, and image sensors. In this study, we present the results of an investigation of poly Si films on glass, formed by nickel-induced crystallization. The process is based on isothermal annealing in air at 550 and 560°C of co-sputtered Ni+Si films deposited on glass at different substrate temperatures, with and without the application of an electric field to the films. The poly Si films were investigated by Raman spectroscopy and Rutherford back-scattering. It was established that the substrate temperature and the Ni-concentration in the precursor amorphous Si+Ni films are important parameters for nickel-induced crystallization.
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