Abstract
Polycrystalline silicon thin films were produced with a high deposition rate of over 10 Å/s at a low temperature of 300°C using a dc arc discharge ion plating method, where the plasma density was 10 12 cm −3 and the source material was solid silicon. The crystalline volume fraction (deduced from a Raman scattering) could be controlled between 0 and 80% by adjusting the process pressure (10 and 70 mTorr, respectively), which was the total pressure of the reactive gas (hydrogen) and discharge gas (argon) in the deposition chamber. Furthermore, increase of the partial pressure of hydrogen also increased the crystalline fraction of the film. These results suggest that highly concentrated active hydrogen plays an important role in the growth of polycrystalline silicon films.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
