Abstract
Polycrystalline silicon (Poly-Si) thin films were successfully fabricated on soda-lime glass substrate by aluminum induced crystallization (AIC) process. In order to analyze non-uniform film by AIC, a new method to evaluate the poly-Si thin film average crystalline volume fraction is proposed, based on the optical microscope and Raman spectroscopy results. This method can obtain more accurate crystallization fraction than the common way. X-ray diffraction results showed that the films are strongly (111) orientated. A new region crystallization pattern in AIC was also proposed.
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