Polycrystalline silicon thin films and solar cells prepared by rapid thermal CVD

Abstract

Polycrystalline silicon (poly-Si) films (∼ 10 μm) were grown from dichlorosilane by a rapid thermal chemical vapor deposition (RTCVD) technique, with a growth rate up to 100 Å/s at the substrate temperature ( T s) of 1030°C. The average grain size and carrier mobility of the films were found to be dependent on the substrate temperature and material. By using the poly-Si films, the first model pn + junction solar cell without anti-reflecting (AR) coating has been prepared on an unpolished heavily phosphorus-doped Si wafer, with an energy conversion efficiency of 4.54% (AM 1.5, 100 mW/cm 2, 1 cm 2).