Abstract
The state of the p-n junction is very important to explain the performances of a solar cell. Some works give the influence of the electric field on the junction capacitance. However, these works do not relate the quality of the p-n junction under the electic field. The present manuscript is about a theoretical modelling of the p-n junction capacitance behavior of the polycrystalline silicon solar cell under an integration of the external electrical field source. An external electrical source is integrated in a solar cell system. The electronic carriers charge generated in the solar cell crossed mainly the junction with the great strength external electrical field. In open circuit, this crossing of the electronic charge carriers causes the thermal heating of the p-n junction by Joule effect. The p-n junction capacitance plotted versus the junction dynamic velocity and the photo-voltage for different external electrical fields. The electric field causes the decrease of the photo-voltage mainly the open-circuit photo-voltage. The decrease of the photo-voltage translates the narrowing of the Space Charge Region (SCR). The average value of the external electric field used in this study is not sufficient to cause the breakdown of the p-n junction of the solar cell system under integration of the external electrical field production source. The increase of the electrical field causes rather the narrowing of the SCR. That can provide an improvement of the solar cell’s electrical outputs.
Highlights
The electricity accessibility is a real difficulty for many developing countries
The present manuscript is about a theoretical modelling of the p-n junction capacitance behavior of the polycrystalline silicon solar cell under an integration of the external electrical field source
The average value of the external electric field used in this study is not sufficient to cause the breakdown of the p-n junction of the solar cell system under integration of the external electrical field production source
Summary
The electricity accessibility is a real difficulty for many developing countries. Today, the photovoltaic (PV) solar energy presents a better opportunity for the providing of the energy for these countries. The integration of an additional electric field source in the solar cell has presented an improvement under monochromatic illumination [3] and under sun light illumination [4]. These studies have shown the possibility to increase the fill factor, the conversion efficiency and others outputs of a crystalline silicon solar cell by addition of an external electrical field. This improvement observed is caused by the increase of the crossing of the carrier’s charge through the p-n junction. The conclusions are in the last section of this work
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