Abstract
A modified CW argon laser‐induced lateral recrystallization of polycrystalline silicon is described. Holding the sample in a furnace at elevated temperature of about 1000°C resulted in significantly reduced thermal gradients and stresses. A wider range of power is allowed for proper recrystallization both on oxide and substrate areas simultaneously. Preferred thermal profiles enabled larger lateral epitaxy of ∼50 μm per single scan. The higher substrate temperature resulted also in wider melted areas and high scan rates of 80 cm/s enabling much shorter processing time.
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