Polycrystalline silicon-germanium films for integrated microsystems

Abstract

Two approaches were demonstrated for fabricating microstructures after completion of CMOS circuits with aluminum metallization. The first approach employed n-type poly-Ge deposited at 400/spl deg/C as a structural material with an SiO/sub 2/ sacrificial layer and an HF release. The CMOS circuits were protected from the release etchant with an amorphous Si layer. Clamped-clamped lateral resonator test structures had quality factors in vacuum as high as /spl sim/30000. Following a 500/spl deg/C, 30 s RTA the poly-Ge stress was 200 MPa (tensile) and the resistivity was 5.3 m/spl Omega/-cm. In the second integration approach, p-type poly-Si/sub 0.35/Ge/sub 0.65/ deposited at 450/spl deg/C was the structural material with poly-Ge as the sacrificial material and H/sub 2/O/sub 2/ as the release etchant. The H/sub 2/O/sub 2/ did not significantly etch the p-type poly-SiGe structural layer and no protection of the underlying CMOS layers was needed. For the first time, the fabrication of LPCVD surface microstructures directly on top of standard electronics was demonstrated, providing dramatic reductions in both MEMS-CMOS interconnect parasitics and device area. A folded flexure lateral resonator had a quality factor in vacuum as high as /spl sim/15000. No stress or dopant-activation anneal was needed, since the in situ boron-doped poly-SiGe was found to have an as-deposited stress of only -10 MPa (compressive) and a resistivity of only 1.8 m/spl Omega/-cm.