Abstract
A polycrystalline silicon carbide film is formed on a silicon surface by atmospheric pressure chemical vapor deposition using monomethylsilane gas and hydrogen chloride gas in ambient hydrogen. The film deposition is performed near 1000 K. The excess amount of silicon on the film surface is reduced using the hydrogen chloride gas. Although the film deposition stops immediately, a further deposition is enabled using baking step at 1273 K in ambient hydrogen.
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