Abstract
Polycrystalline GeSn thin films on Si substrates with a Sn composition up to 4.5% have been fabricated and characterized. The crystalline structure, surface morphology, and infrared (IR) absorption coefficient of the annealed GeSn thin films were carefully investigated. It was found that the GeSn thin films with a Sn composition of 4.5% annealed at 450 °C possessed a desirable polycrystalline structure according to X-ray diffraction (XRD) analyses and Raman spectroscopy analyses. In addition, the absorption coefficient of the polycrystalline GeSn thin films in the IR region was significantly better than that of the single crystalline bulk Ge.
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