Abstract
Abstract Diamond deposition processing and silicon photolithographic and etching techniques were used to create undoped diamond diaphragms a few millimetres in diameter and 5–10 microns thick. Delineated and electrically isolated doped diamond resistors nominally 100 microns wide by 500 microns long by 4 microns thick, with thick film silver-based interconnect are fabricated on top of the diaphragm. Zero strain values of the resistors are nominally a few hundred kΩ Isolation ratio is greater than 103. As the membrane is flexed by pressure, the ΔR R piezoresistance (PZR) of the diamond resistors was measured. Various PZR configurations and temperature behaviour were examined.
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