Abstract
InGaP/GaAs heterojunction bipolar transistors (HBTs) with polycrystalline GaAs buried under the base electrode have been fabricated using low-temperature gas-source molecular beam epitaxy on SiO/sub 2/-patterned substrates. A cutoff frequency of 120 GHz and a maximum oscillation frequency of 230 GHz were obtained for three parallel 0.7/spl times/8.5 /spl mu/m HBTs. Compared to HBTs without the polycrystal, the collector capacitance was reduced by 28% and the maximum stable gain was improved by 1.2 dB due to complete carrier depletion in the polycrystal under the base electrode. These results show the high potential of the proposed HBTs for high-speed digital and broadband-amplifier applications.
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