Abstract
ABSTRACT Poly(ether-ketone) (PEK)/silicon nitride (Si3N4) nanocomposites were fabricated by cold compaction followed by sintering at 260°C. Vickers microhardness and storage modulus of the nanocomposites increased, while their % crystallinity and thermal stability decreased without affecting the glass transition temperature. The dielectric constant of the nanocomposites increased to 5.03 with a dissipation factor (at 1 kHz) below 0.007. In brief, the PEK/Si3N4 nanocomposites might be useful as potential candidates as alternative material for the printed circuit board application.
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