Abstract
Pure and PDMS contaminated PS oligomers films were investigated both by time-of-flight static secondary ion mass spectrometry (TOF-SSIMS) and X-ray photoelectron spectroscopy (XPS).The secondary ion spectra from the PDMS contaminated PS oligomers were almost completely related to PDMS. XPS revealed a PDMS contamination characterized by a silicon surface concentration of 6at.%. Obviously siloxane contaminants existing on the surface of a silicon wafer may diffuse towards the PS oligomers outermost surface resulting in a rather high PDMS surface concentration of about 85%. Due to the known differences in the information depth and sensitivity of SSIMS and XPS very different detection limits are to be considered.In elimination of siloxane contaminants by ultrasonication in hexane was found to be an effective way. Another common organic cleaning procedure, which is ultrasonication in trichloroethylene (TCE), subsequently in isopropanol and finally in acetone was found to be ineffective for cleaning of PDMS contaminated silicon wafers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.