Poly(4-vinylphenol-co-methyl methacrylate)/Hafnium Oxide Nanocomposite Gate Insulators for Organic Thin-Film Transistors.

Abstract

We fabricate 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn) thin-film transistors (TFTs) with nanocomposite insulators. The insulator layers consist of both poly(4-vinylphenol-co-methyl methacrylate) and high-dielectric constant hafnium oxide (HfO₂) nanoparticles. The HfO₂ nanoparticles are ball-milled for sufficient dispersion in a nanocomposite solution to enable solution process methods to be used in preparing the insulator layers. The nanocomposite insulators demonstrate high capacitances and improve the performance of TIPS-Pn TFTs. Nonetheless, particle aggregates are produced in the nanocomposites solution with high HfO₂ concentrations, generating detrimental effects on the dielectric properties and the TFT performance. Our experimental result implies that the optimum concentration of HfO₂ nanoparticles in a mixed solution will find to be ~11.5 wt%.