Abstract
Poly(2-trimethylsilyl-2-propyl methacrylate-co-γ-butyrolactone-2-yl methacrylate) was synthesized and evaluated as a chemically amplified resist for ArF lithography. The polymer has excellent transmittance at 248nm and also has a good transmittance at 193nm. In addition, the polymer possesses good thermal stability up to 200°C, whereas in the presence of an acid the cleavage of the 2-trimethylsilyl-2-propyl ester group begins at about 80°C in a catalytic manner. Patterns of 0.24μm line/space were obtained with a conventional developer, 2.38wt.% tetramethylammonium hydroxide aqueous solution, using an ArF excimer laser exposure system.
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