Abstract
We have studied the chemical polishing of the surface of single crystals of PbTe and Pb1 − xSnxTe solid solutions by H2O2-HBr-C2H2O4 bromine-releasing etchants. The dissolution rate of the crystals has been determined as a function of etchant composition, solution stirring rate, and temperature. The polished surfaces have been examined by microstructural analysis and scanning electron microscopy. We have located the composition boundaries of solutions for the dynamic chemical polishing of the semiconductor materials studied.
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