Polished surface roughness of optoelectronic components made of monocrystalline materials

Abstract

A study of the mechanism of formation of monocrystal planes of different crystallographic orientations has revealed that in polishing of sapphire the surface roughness parameters Ra, Rq, Rmax decrease in the series c > r > m > a with decreasing dielectric permittivity and thermal conductivity coefficient of the workpiece material, debris particle height, and Lifshitz constant that represents the energy of interaction between the polishing powder grains and the workpiece surface. The minimum allowable values of surface roughness parameters for atomically smooth surfaces have been defined, which linearly depend on interplanar spacings and decrease in the series r > a > c > m.