Abstract

Interplay of spin, charge, orbital and lattice degrees of freedom in oxide heterostructures results in a plethora of fascinating properties, which can be exploited in new generations of electronic devices with enhanced functionalities. The paradigm example is the interface between the two band insulators LaAlO3 and SrTiO3 that hosts a two-dimensional electron system. Apart from the mobile charge carriers, this system exhibits a range of intriguing properties such as field effect, superconductivity and ferromagnetism, whose fundamental origins are still debated. Here we use soft-X-ray angle-resolved photoelectron spectroscopy to penetrate through the LaAlO3 overlayer and access charge carriers at the buried interface. The experimental spectral function directly identifies the interface charge carriers as large polarons, emerging from coupling of charge and lattice degrees of freedom, and involving two phonons of different energy and thermal activity. This phenomenon fundamentally limits the carrier mobility and explains its puzzling drop at high temperatures.

Highlights

  • Interplay of spin, charge, orbital and lattice degrees of freedom in oxide heterostructures results in a plethora of fascinating properties, which can be exploited in new generations of electronic devices with enhanced functionalities

  • In typical high-electron mobility transistors (HEMTs), a donor layer of n-doped AlGaAs injects electrons into the channel layer of intrinsic GaAs where, escaping scattering on the dopant impurities, the electrons are limited in their mobility only by the polaronic coupling enhanced by spatial confinement in the GaAs quantum well (QW)[3]

  • Our LAO/STO(001) samples with an LAO overlayer thickness of B18 Å corresponding to 5 unit cells (u.c.) were grown using Pulsed

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Summary

Introduction

Charge, orbital and lattice degrees of freedom in oxide heterostructures results in a plethora of fascinating properties, which can be exploited in new generations of electronic devices with enhanced functionalities. This mode has been observed by ARPES on (doped) bare STO(001)[32,33,34] with the strength of the polaronic structure depending on ns.

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