Year-end Sale % OFF 
Abstract
AbstractA theory of polar optical vibrations in multilayer semiconductor structures is developed taking into account phonon dispersion. A method of diagonalization of the equations of motion for inertial polarization vectors in the finite basis is used, that is founded on a finite number of degrees of freedom of the system. The Hamiltonian of the electron‐phonon interaction is deduced. The dispersion law and the spatial dependence of the obtained eigenmodes are in good agreement with experimental data and microscopic models. It is shown that the electron scattering rate in a magnetic field depends on the chosen model of polar optical vibrations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
