Abstract
Dc conductivity and Hall effect measurements were performed on Cu-GeO<SUB>2</SUB> thin films with the aim of obtaining information about dc conduction mechanism. The conductivity results reveal that the activation energy is temperature dependent, increasing significantly above a btransition temperature T<SUB>t</SUB>. Hall mobility showed a sign reversal around T<SUB>t</SUB>, above which it increased with increasing temperature reaching a maximum at a critical temperature T<SUB>c</SUB>. Above T<SUB>t</SUB>, the conductivity is best described by small polaron hopping model. Below T<SUB>t</SUB>, the Hall mobility shows a significant rise with decreasing temperature, indicating polaronic band conduction mechanism. Various parameters associated with polaronic formation are calculated.
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