Abstract
Weak coupling polaron corrections are calculated for the case of single semiconductor heterostructures (of the GaAs-Al x Ga 1− x As prototype). The electron-LO-phonon interaction Hamiltonian derived in a previous work for this kind of systems is applied. We limit ourselves to the zero temperature case and electrons are described in the effective mass approximation assuming a parabolic energy band structure. We also assume the extreme quantum limit and ignore intersubband electron transitions. Screening effects are included along the lines of the Thomas-Fermi static approximation. Comparison with another theoretical work and experiment is made. In the frame of our approach, relatively small polaron corrections are predicted.
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