Abstract
Local structures around Al atoms in high-quality m-plane AlxGa1-xN films (x=0.32 and 0.58) deposited on m-plane GaN substrates by the NH3 source molecular beam epitaxy method were investigated by Al K-edge X-ray absorption fine structure (XAFS) for the first time. XAFS spectra were measured using a linearly-polarized X-ray source from synchrotron radiation for three different directions; along the c-, a-, and m-axes. The interatomic distances along the a-axis are close to Ga-Ga distance in GaN, indicating that the local structures are strongly affected by GaN substrates. The localization of Al atoms was observed for the Al0.32Ga0.68N film.
Highlights
III-nitrides have attracted much attention as materials for blue and ultraviolet light emitters [1]
Experiment Al K-edge (1560eV) XAFS was measured on BL11A
To measure the polarization dependence XAFS, we set the sample in three alignments: (1) the electric field vector of X ray is parallel to the a-axis [11-20], (2) to the c-axis [0001], and (3) to the m-axis [1-100], respectively
Summary
III-nitrides have attracted much attention as materials for blue and ultraviolet light emitters [1]. Experiment Al K-edge (1560eV) XAFS was measured on BL11A
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