Abstract
The current-voltage characteristics of Ag 2Se/Se/M thin film sandwiches were studied as functions of the shapes of the electrodes, which were either symmetrical or asymmetrical, as well as their composition (M is a metal (gold, chromium or silver) or Ag 2Se). A polarized memory switching effect independent of air exposure was observed. The first commutation occurs at a formation voltage V F which is dependent on the selenium thickness. After some cycles this voltage stabilizes to a value V S (where V S < V F ). V S is a function of temperature, frequency and the maximum reverse voltage but is independent of the selenium thickness. All these results are explained in terms of Ag + ionic diffusion: the formation is related to the growth of Ag 2Se dendrites through selenium as shown by temperature-dependent experiments. Furthermore the variations in V S are accounted for by ionic motion localized at the M-Se interface.
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