Abstract
ABSTRACTExperimental results on structural change other than defect creation upon light-soaking of hydrogenated amorphous silicon (a-Si:H) are reported. A-Si:H films were light-soaked with laser pulses or with continuous (cw) light to steady-states, and then annealed at 170 °C in vacuum. The changes in electro-absorption (EA) signal, and defect density (Nd) from subgap absorption were measured as functions of light-soaking/annealing time. The results are: (1) EA ratio, which is defined as the ratio of anisotropie to isotropie components in EA signal, increases upon light-soaking with a time constant shorter by almost two orders of magnitude than that for Nd increase, and (2) shows saturation when extensively light-soaked. (3) The saturated values of EA ratio are comparable for both pulsed and cw light-soaking. (4) Both the EA ratio and Nd show recovery to the values in the annealed states. It is suggested that light-soaking causes a structural change in a short time, as manifested by EA ratio, and this changed structure works as the pathway leading to the defect creation. Thermal annealing is also discussed.
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