Abstract
Angular distribution of resonant photoemission by polarized light has been calculated for a GaAs(110) surface core exciton in the lowest order of a direct recombination process and with a simplifying assumption about the local density of states of a final state hole. The result, together with the refraction effect across the surface, offers a qualitative understanding of the puzzling polarization dependence of emission intensity measured by Lapayre and Anderson [Phys. Rev. Letters 35 (1975) 117].
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