Abstract
Ferroelectric/anti-ferroelectric/Ferroelectric(FE/AFE/FE) stack-based multi-bit memory has better device-to-device variation control compared to single-layer FE devices. The interplay between FE and AFE layers hasn’t been studied which influences the switching current profile. We simulate the polarization switching characteristics in AFE/FE double layers and analyze their differences from stand-alone devices due to the interplay between the layers. The impacts of spontaneous polarization charges and film thicknesses on the current shift are evaluated, which provides design guidance for these multi-layer devices.
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