Abstract
Ferroelectric photovoltaic materials have been subjected to intensive research in view of their applications for high-performance self-biased UV photodetectors. This work reports the ferroelectric polarization-enhanced near-UV (λ = 405 nm) and UVA (λ = 360 nm) photoresponse of the indium-tin-oxide (ITO)/(Bi0.93Sm0.07)FeO3/Pt and ITO/(Bi0.93Gd0.07)FeO3/Pt heterostructures. A superior photoresponse was observed in the ITO/(Bi0.93Gd0.07)FeO3/Pt device with photoresponsivity of ∼7.3×10−2A/W, specific detectivity of ∼2.5×1011Jones, and response times of τr ∼1 ms and τd ∼1 s under 360-nm light illumination. The photocurrent generation is facilitated by the interfacial E fields and ferroelectric polarization-induced E field. The improved photosensing ability is ascribed to the collective effect of the electric field-enhanced interaction between oxygen 2p and Fe 3d orbitals and the interconnection of grain boundaries and domain walls that plays roles of charge transport paths. (Bi0.93Gd0.07)FeO3 exhibited a more superior photoresponse than (Bi0.93Sm0.07)FeO3 due to its more complex domain structure, smaller bandgap, and stronger orbital hybridization. These results demonstrate the feasibility of utilizing the ferroelectric polarization and domain structure in (Bi0.93Gd0.07)FeO3 to enhance photodetection, thus providing a route for the realization of a highly sensitive and self-biased visible-UVA photodetector.
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