Abstract
Polarization-resolved lateral-photoconductivity measurements are reported on device structures made of GaAs/Al0.3Ga0.7As quantum wells sandwiched between low-temperature grown GaAs(001) layers. The mesa device structures have long length (3 mm∥y) and narrow width (10 and 20 μm∥x) in the (001) plane. For light incident along [001], the ground state light-hole exciton transition is much stronger for light polarization E∥x, compared to E∥y. The heavy-hole exciton transition shows a weaker polarization anisotropy of opposite sign, being stronger for E∥y. Through calculations based on the Bir–Pikus Hamiltonian, the observed in-plane optical polarization anisotropy is shown to arise from valence band mixing induced by anisotropic strain in the plane of quantum wells.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
