Abstract
The 6G technology has identified the frequency range of 0.1 to 1 THz as the communication band, with a particular focus on ultrafast modulation and multi-dimensional resolution coding technology. To advance the applications of THz photonics, there is a critical need for high-performance active optoelectronic THz devices. One potential solution involves the utilization of electrically controlled semi-metallic based THz modulators, which can provide suitable modulation depth and a wide modulation bandwidth. In this research, a semi-metallic TiS2 nanofilm device was developed using femtosecond laser direct ablation. The combination of structural effects and TiS2 absorption has significantly improved active modulation. These findings indicate that TiS2-based devices are well-suited for applications in THz photonics.
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