Abstract
We propose a method to obtain the ratio of the fundamental TE/TM optical response of a quantum-confined system from the measurement of the polarization dependence of the edge photovoltage spectrum by correcting for polarization-dependent features of the experimental system. When applied to compressive- and tensile-strained InGaP quantum well structures, the results are in excellent agreement with known ratios of the band-edge matrix elements. The method will be of a particular value in the study of quantum dot systems.
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