Abstract
The photoluminescence (PL) of GaAs/Al0.35Ga0.65As:Be quantum wells is studied at temperatures of 77 and 300 K under conditions of uniaxial compression along the [110] direction. There are two main lines in the PL spectra; at zero pressure and T = 77 K, the peaks appear at 1.517 and 1.532 eV. Comparison of the pressure dependences of the peak positions and the polarization of the PL measured experimentally with those calculated theoretically gives evidence that, at T ≥ 77 K, these bands originate from the recombination of free electrons with heavy and light holes in the GaAs valence band.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
