Abstract
We study by microphotoluminescence the polarization properties of single zinc-blende GaN/AlN quantum dots fabricated by two growth processes: the droplet epitaxy technique and the Stranski-Krastanov growth mode. A statistical analysis of their polarization properties both at the mesoscopic and nanoscopic scales indicates that it is possible to modify the phase and amplitude of their valence band mixing by switching on and off the influence of AlN antiphase domains through the growth process. $k\phantom{\rule{0.16em}{0ex}}.p$ calculations show that the strain effects and quantum dot geometries resulting from the growth process play a major role in shaping their polarization properties.
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