Abstract
The photosensitivity of polycrystalline-film Cu(ln,Ga)Se2/CdS/ZnO solar cells with different thickness of CdS and ZnO films have been studied. These structures exhibit a conversion efficiency 11-12% in the spectral region from 1.2 to 2.4 eV at T= 300 K. Polarization photosensitivity was observed for oblique incidence of linearly polarized light on the ZnO surface of these structures. The induced photopleochroism and an increase of the photocurrents as a result of a decrease of reflection losses were found. The induced photopleochroism 82 coefficient P1 increases with the angle of incidence E> as P1- and its value isfound to be 10-17% at E>= 75e°. The results of these polarization investigations demonstrate the sensitivity of the photoelectric processes to the optical quality of the ZnO films. Such polycrystalline-film solar cells can be employed as polarization-photosensitive devices.
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