Abstract
Linear polarization properties of light emission are presented for GaN nanorods (NRs) grown along [0001] direction on Si(111) substrates by direct-current magnetron sputter epitaxy. The near band gap photoluminescence (PL) measured at low temperature for a single NR demonstrated an excitonic line at ∼3.48 eV and the stacking faults (SFs) related transition at ∼3.43 eV. The SF related emission is linear polarized in direction perpendicular to the NR growth axis in contrast to a non-polarized excitonic PL. The results are explained in the frame of the model describing basal plane SFs as polymorphic heterostructure of type II, where anisotropy of chemical bonds at the interfaces between zinc blende and wurtzite GaN subjected to in-built electric field is responsible for linear polarization parallel to the interface planes.
Highlights
III-nitride semiconductors (GaN, related alloys with Al and In) have many advantages such as direct bandgap materials, high electrical breakdown field, high electron mobility, good thermal and chemical stability
The use of nanostructures like nanowires may be a solution to this problem, if the structural defects can be confined to the stem of the wires facing the substrates, and the wires themselves are dislocation free
A bunch of basal plane stacking faults (SFs) forming a rather periodic structure in the growth direction of NRs was confirmed by transmission electron microscopy (TEM)
Summary
III-nitride semiconductors (GaN, related alloys with Al and In) have many advantages such as direct bandgap materials, high electrical breakdown field, high electron mobility, good thermal and chemical stability. St. Petersburg, Russia (Received 14 October 2016; accepted 3 January 2017; published online 18 January 2017)
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