Polarization of dislocation absorption and luminescence in direct gap semiconductors with edge dislocations

Abstract

AbstractThe bound electron states at an edge dislocation in direct gap semiconductors are investigated in the deformation potential model taking into account the triple degeneracy of the valence band maximum. The experimentally observed polarization of dislocation absorption (DA) and dislocation luminescence along the Burgers vector is explained theoretically. The interaction between the anisotropic dislocation field and the anisotropic valence subbands gives rise to three series of hole dislocation levels of different depths, the DA polarization being determined by the polarization of the optical transitions from the deepest holes series to the isotropic states of the conduction band.