Abstract
It is found that even a lattice-matched InGaAlAs/InAlAs multiple quantum well structure produces polarization-insensitive field-induced refractive index change (Δn). As the exciton absorption peak wavelength (λex) is set farther apart from the operation wavelength, the polarization of incident light by which larger Δn can be obtained changes from TE to TM mode. Moreover, as the thickness of the quantum well increases, enlargement of Δn induced on TM-polarized light is enhanced. These observations indicate that by selecting λex and the well thickness, the quaternary lattice-matched system has great flexibility in the device design for polarization-insensitive operation.
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