Abstract
A novel route to achieve two dimensional (2D) carrier confinement in a wedge shaped wall structure made of a polar semiconductor has been demonstrated theoretically. Tapering of the wall along the direction of the spontaneous polarization leads to the development of charges of equal polarity on the two inclined facades of the wall. Polarization induced negative (positive) charges on the facades can push the electrons (holes) inward for a n-type (p-type) material which results in the formation of a 2D electron (hole) gas at the central plane and ionized donors (acceptors) at the outer edges of the wall. The theory shows that this unique mode of 2D carrier confinement can indeed lead to a significant enhancement of carrier mobility. It has been found that the reduced dimensionality is not the only cause for the enhancement of mobility in this case. Ionized impurity scattering, which is one of the major contributer to carrier scattering, is significantly suppressed as the carriers are naturally separated from the ionized centers. A recent experimental finding of very high electron mobility in wedge shaped GaN nanowall networks has been analyzed in the light of this theoretical reckoning.
Highlights
Schrödinger and Poisson equations are solved self-consistently to obtain the potential and charge density distribution within a n-type GaN nanowall that is tapered along its polarization direction
We have chosen GaN, a strongly polar semiconductor as a test case
The result supports the formation of a 2D electron gas in the central vertical plane of the wall
Summary
Schrödinger and Poisson equations are solved self-consistently to obtain the potential and charge density distribution within a n-type GaN nanowall that is tapered along its polarization direction. The low field electron mobility in 2DEG has been theoretically calculated taking into account three major scattering contributions namely the ionized-impurity, neutral-impurity and polar-optical phonons.
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