Abstract
Fe3Ga/HfO2/Fe3Ga heterojunction possesses reasonable lattice mismatch and good ferroelectric at the nanoscale. However, its magnetoelectric coupling is unexplored. Based on the first-principles calculations, we demonstrate that the magnetoelectric coupling in Fe3Ga/HfO2/Fe3Ga heterojunction is induced by polarization, which is different from the common strain-mediated magnetoelectric effect. The polarization-induced magnetoelectric effect of heterojunction is explained by the analyses of orbital-resolved density of states and spin densities, finding that the interfaces between Fe3Ga and HfO2 play an important role in magnetoelectric coupling, offering an alternative pathway for generating magnetoelectric coupling at room temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
