Abstract
The polarization induced instability of a glass passivated p+‐n junction under bias‐temperature (BT) stress aging has been investigated by using a gate controlled diode (GCD) and a p+‐n diode. It is shown that positive and negative gate bias‐temperature (±GBT) stress aging causes the net surface charge density to shift symmetrically due to polarization in the glass layer. Plateau and stepped reverse current‐voltage characteristics, owing to excess positive and negative net surface charge densities, respectively, were observed. The subsequent junction bias‐temperature (JBT) stress aging on the GCD enhances the stepped reverse current‐voltage characteristics. Similar stepped current‐voltage characteristics can be found in a p+‐n diode without a gate electrode after JBT stress aging. Photoresponse data on these phenomenon are presented for the p+‐n diode after JBT stress aging, and a simple model is given to account for the polarization induced instability behavior of a glass passivated p+‐n junction.
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