Abstract
We report on a room temperature polarization-independent intersubband photocurrent (PC) in quantum-well infrared photodetector based on a GaInAsN/GaAs standard multiple-quantum-well structure. The dominant room temperature PC is peaked at 1.42 μm with peak responsivity of 2 A/W and exhibits similar intensities in TM and TE polarizations. The structure’s energy levels were analyzed using a ten band k⋅p model. As a result of this analysis the 1.42 μm dominant PC transition is attributed to a transition from the fundamental E1− electron level into the localized quasicontinuum state formed by the unconfined E2+ electron energy level.
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