Abstract
High contrast grating (HCG) 1300 nm InAs/GaAs quantum dot (QD) vertical-cavity surface-emitting laser (VCSEL) has been introduced in this manuscript and the impact of device structure on the self-heating effect and device temperature has been investigated. A self-consistent model that couples the opto-electro-thermal model of the device to the optical gain model is used to calculate optical gain. Simulated results indicate that the proposed structure significantly lowers the hole-burning effect due to a decrease in temperature. So, in contrast to the conventional QD-VCSELs, the HCG QD-VCSEL exhibits better carrier confinement due to hole quantum efficiency of 54% as opposed to 45% for the conventional QD-VCSELs at their rollover current density. Also, results show an improvement of 66% in the maximum output power from the HCG QD-VCSEL compared to a conventional QD-VCSEL structure. In addition, the 3-dB modulation bandwidth has been boosted compared to conventional QD-VCSELs.
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