Abstract
In this work, we present an off-axis holography study of GaN/AlN heterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. We discuss the sample preparation of nanowire samples for electron holography and combine potential profiles obtained using holography with theoretical calculations of the projected potential in order to gain understanding of the potential distribution in these nanostructures. The effects of surface states are discussed.
Highlights
Semiconductor nanowires (NWs) have become a powerful and diverse family of functional materials for nano-electronics, optoelectronics and biotechnology
A particularity of nitride materials is the very strong polarization-related internal electric field present in heterostructures, which can be assessed through its effect on optical or electrical properties
A direct measurement of the internal electric field profile is more challenging but could in principle be realized by off-axis electron holography
Summary
Semiconductor nanowires (NWs) have become a powerful and diverse family of functional materials for nano-electronics, optoelectronics and biotechnology. A direct measurement of the internal electric field profile is more challenging but could in principle be realized by off-axis electron holography.
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