Abstract
Operating quantum materials through the application of strong electric field holds great promise for the development of new-generation electronic and photonic technologies with currently inaccessible functionalities. The conventional way of applying gate voltage to produce sufficiently high electric field faces challenge in micro-nano level. Here, we explore polarization field of two-dimensional piezoelectric semiconductors under externally applied strain. The results suggest that the intensity of polarization field can exceed 10 MV/cm near the boundaries of single-layered MoS2 ribbon. Such polarization field can trigger the metallicity-to-semiconductor (M-S) phase transition of one-dimensional edge states, and even lead to metallic bulk states. Similar phase transition can also be driven by a pure external electric field but the required intensity is in the order of MV/cm. Electric field driving the semiconducting phase of edge states presents the sensitive dependence of ribbon width but relatively robust for polarization field. This study opens a new avenue to manipulate quantum materials by high polarization field.
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