Abstract
Bi 3.35 La 0.75 ( Ti 1−x W x ) 3 O 12 (BLTW) and Bi3.35La0.75(Ti1−xMox)3O12 (BLTM) (x=0.3%, 0.5%, 1%, and 2%) films were fabricated on Pt/Ti/SiO2/Si〈100〉 structures by a sol-gel method at 750 °C. The B-site substitution with high-valent cations, W6+ or Mo6+, in Bi3.35La0.75Ti3O12 (BLT) enhanced the remanent polarization and reduced the coercive field of the films. The remanent polarization (2Pr) values of the BLTW05 (x=0.5%) and BLTM05 (x=0.5%) films were 26 and 27 μC/cm2, respectively, which were higher than that of BLT (20 μC/cm2). The coercive field (2Ec) values of the BLTW05 and BLTM05 films were 125 and 126 kV/cm, respectively, which were much lower than that of BLT (190 kV/cm) and close to that of SrBi2Ta2O9 (∼110 kV/cm). These films also showed fatigue-free response up to 2×109 switching cycles and lower leakage current densities than 4×10−7 A/cm2 up to 200 kV/cm.
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