Abstract
The electron dynamics of transiently photoexcited carriers at an in situ cleaved InSb(110) surface was studied in normal emission using polarization-dependent time- and angle-resolved photoelectron spectroscopy. The photoexcited peak was found to be of even parity, and the measured total decay time was significantly shorter than on all clean III-V semiconductor cleavage surfaces previously studied using this technique. The very high mobility of the conduction-band electrons in InSb is believed to contribute to the fast decay via rapid diffusion of carriers away from the surface region.
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