Abstract
Two-photon absorption of light in narrow-gap semiconductors of InSb and HgCdTe type is considered in the framework of the two-band Kane model. The analytical expressions for the TPA coefficient in dependence on the energies of pumped radiation and band gap of semiconductor is obtained. All the possible nonequivalent geometries of experiment are considered. In the calculations the excitonic effects are neglected. The polarization dependences are discussed and the comparison with experiment is carried out. [Russian Text Ignored].
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