Abstract
The Stark effect has been studied in multilayer InGaAs/GaAs laser structures with self-assembled quantum dots (QDs). A shift in the absorption edge depending on the reverse bias voltage has been measured in a two-section laser diode. The QD absorption edge shifts toward longer wavelengths with increasing electric field strength. It is established that the QD absorption depends on the polarization of light. The intensity at which TE-polarized luminescence in laser structures is studied is more than ten times higher than that of the TE-polarized emission component, which is explained by higher amplification of the TE mode.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.