Abstract
The polarization dependence of the photosensitivity (PS) of the Schottky barrier diodes based on the InGaAs/GaAs quantum well (QW) and quantum dot (QD) structures has been studied. The PS polarization dependence follows the theoretical one with good agreement. The effect of the hole state mixing in the QW on the PS polarization dependence has been studied. The asymmetry of the PS polarization dependence of the QDs in the [110] and [11̄0] directions has been observed attributed to the effect of piezoelectric field induced by the elastic strain.
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